The innovative HDRS has been successfully conceived by and drawn on the 55 years of scientific and technology wisdom on plasma research ! !
-Stable plasma generation -RF power on → Immediate radical formatin -RF power off → Stops radical formation
-Supply of high density radicals -Long-time stable plasma generation
・Conventional radical source does not satisfy the performance of realizing the high quality epitaxial growth at high growth rate.
・Effective utilization of the achievements and wisdoms of Nagoya University for the design and development of HDRS.
・Solving conventional defects, the HDRS has realized the high quality epitaxial growth technology and will open up a new horizon for GaN material world.
2014 Winner of the Nobel Prize in Physics, Prof. H. Amano, participated in the development of HDRS! !
Prof. H. Amano contributed to the evaluation of performance in GaN MBE growth and made lot of very important comments to improve the HDRS performance.