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Radical Monitor

Radical Monitor

μ-AP Type Nonequilibrium Atmospheric-Pressure Plasma Apparatus

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Product Information
High Density Radical Source

The innovative HDRS has been successfully conceived by and drawn on the 55 years of scientific and technology wisdom on plasma research ! !


-Stable plasma generation
-RF power on → Immediate radical formatin
-RF power off → Stops radical formation


-Supply of high density radicals
-Long-time stable plasma generation


・Conventional radical source does not satisfy the performance of realizing the high quality epitaxial growth at high growth rate.

・Effective utilization of the achievements and wisdoms of Nagoya University for the design and development of HDRS.

・Solving conventional defects, the HDRS has realized the high quality epitaxial growth technology and will open up a new horizon for GaN material world.


2014 Winner of the Nobel Prize in Physics, Prof. H. Amano, participated in the development of HDRS! !
Prof. H. Amano contributed to the evaluation of performance in GaN MBE growth and made lot of very important comments to improve the HDRS performance. 

S. Chen, Y. Kawai, H. Kondo, K. Ishikawa, K. Takeda, H. Kano, M. Sekine, H. Amano, M. Hori, Jpn. J. Appl. Phys., 52(2013)021001.
© 2013 The Japan Society of Applied Physics

Feature 1: High density N radicals enable high growth rete of GaN.

Ar plasma developmental state

Y. Kawai et al., ISPlasma2013(Nagoya Univ., - March)Tup-B06OB.

Featrue 2: High-quality crystal growth can be achieved with a high growth  rate.

S.Chen et al., Jpn. J. Appl. Phys., 52 (2013) 021001.

© 2013 The Japan Society of Applied Physics

Feature 3: Because the plasma becomes steady as soon as the power is supplied, the supply and interruption of the radicals can be instantaneously controlled.

As the plasma of HDRS becomes stable instantly, MEE(Migration Enhanced Epitaxy) which prevents crystal defects can be adopted.  Y. Horikoshi et el., Jpn. J. Appl. Phys. 25(1986)L868.


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